Investigation of Ge p-i-n photodetector as a part of pulsed laser rangefinder prototype

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2021
• Hauptverfasser: Fedorenko, A.V., Vorona, I.O., Maslov, V.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
• Schlagworte: Optoelectronics and optoelectronic devices
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/216091
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Investigation of Ge p-i-n photodetector as a part of pulsed laser rangefinder prototype / A.V. Fedorenko, I.O. Vorona, V.P. Maslov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 1. — С. 100-104. — Бібліогр.: 15 назв. — англ.

The process of diffusion method for production of high-speed Ge p-i-n photodiodes for a laser rangefinder with a maximum photosensitivity at the wavelength 1.54 μm and a new passivating layer of ZnSe is described. Theoretical modeling of the rangefinder operation in real conditions was performed to...