THz linear array scanner in application to the real-time imaging and convolutional neural network recognition

Room temperature linear arrays (up to 160 detectors in an array) from silicon metaloxide-semiconductor field-effect transistors (Si-MOSFETs) have been designed for subTHz (radiation frequency 140 GHz), close to real-time direct detection operation scanner to be used for detection and recognition of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2021
Hauptverfasser: Golenkov, A.G., Shevchik-Shekera, A.V., Kovbasa, M.Yu., Lysiuk, I.O., Vuichyk, M.V., Korinets, S.V., Bunchuk, S.G., Dukhnin, S.E., Reva, V.P., Sizov, F.F.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
Schlagworte:
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/216092
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:THz linear array scanner in application to the real-time imaging and convolutional neural network recognition / A.G. Golenkov, A.V. Shevchik-Shekera, M.Yu. Kovbasa, I.O. Lysiuk, M.V. Vuichyk, S.V. Korinets, S.G. Bunchuk, S.E. Dukhnin, V.P. Reva, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 1. — С. 90-99. — Бібліогр.: 38 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine