A review of high ideality factor in gallium nitride-based light-emitting diode
Theory concerning the high ideality factor of gallium nitride (GaN) based light-emitting diode (LED) has been reviewed. The presence of a high ideality factor indicates a large forward voltage that results in efficiency reduction. The paper suggests that tunneling is the main reason defining the exp...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2021 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/216093 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | A review of high ideality factor in gallium nitride-based light-emitting diode / A.S. Hedzir, N.F. Hasbullah // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 1. — С. 83-89. — Бібліогр.: 29 назв. — англ. |