Effect of the diffusion temperature on the interaction of clusters with impurity atoms in silicon
In this paper, the results of studies of the effect of the diffusion temperature on the interaction of clusters of manganese atoms with the sulfur ones have been presented. It has been shown that the electrical parameters of the samples simultaneously doped with sulfur and manganese completely coinc...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2021 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/216102 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of the diffusion temperature on the interaction of clusters with impurity atoms in silicon / Z.M. Saparniyazova, K.A. Ismailov, A.K. Uteniyazov, Kh.U. Kamalov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 1. — С. 22-25. — Бібліогр.: 6 назв. — англ. |