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Effect of the diffusion temperature on the interaction of clusters with impurity atoms in silicon

In this paper, the results of studies of the effect of the diffusion temperature on the interaction of clusters of manganese atoms with the sulfur ones have been presented. It has been shown that the electrical parameters of the samples simultaneously doped with sulfur and manganese completely coinc...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2021
Hauptverfasser:	Saparniyazova, Z.M., Ismailov, K.A., Uteniyazov, A.K., Kamalov, Kh.U.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/216102
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Effect of the diffusion temperature on the interaction of clusters with impurity atoms in silicon / Z.M. Saparniyazova, K.A. Ismailov, A.K. Uteniyazov, Kh.U. Kamalov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 1. — С. 22-25. — Бібліогр.: 6 назв. — англ.

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