Effect of the diffusion temperature on the interaction of clusters with impurity atoms in silicon
In this paper, the results of studies of the effect of the diffusion temperature on the interaction of clusters of manganese atoms with the sulfur ones have been presented. It has been shown that the electrical parameters of the samples simultaneously doped with sulfur and manganese completely coinc...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2021 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/216102 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of the diffusion temperature on the interaction of clusters with impurity atoms in silicon / Z.M. Saparniyazova, K.A. Ismailov, A.K. Uteniyazov, Kh.U. Kamalov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 1. — С. 22-25. — Бібліогр.: 6 назв. — англ. |
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