Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime
In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approa...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2021 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/216103 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime / A. Latreche // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 1. — С. 16-21. — Бібліогр.: 30 назв. — англ. |
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