New thermal small-signal model for FP-HEMT used in satellite communication applications

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2021
• Main Authors: Kourdi, Z., Hamdoune, A., Khaouani, M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
• Subjects: Optoelectronics and optoelectronic devices
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/216174
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: New thermal small-signal model for FP-HEMT used in satellite communication applications / Z. Kourdi, A. Hamdoune, M. Khaouani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 2. — С. 210-217. — Бібліогр.: 31 назв. — англ.

In this paper, we study a field plate high electron mobility transistor (FP-HEMT) device with Al₂O₃ passivation, InAlN/GaN lattice matched, and a gate of 30-nm length. We simulate its performance evaluation in function of the thermal effect mode. We also show the analysis and simulation of this devi...