Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon
The formation of complexes of impurity Mn atoms with group VI impurities (S, Se, Te) in the silicon crystal lattice has been studied. It has been experimentally found that the formation of electrically neutral molecules with an ionic-covalent bond between Mn atoms and group VI elements takes place,...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2021 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/216231 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon / K.А. Ismailov, X.M. Iliev, M.O. Tursunov, B.K. Ismaylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 3. — С. 255-260. — Бібліогр.: 12 назв. — англ. |