Cover Image

Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

The formation of complexes of impurity Mn atoms with group VI impurities (S, Se, Te) in the silicon crystal lattice has been studied. It has been experimentally found that the formation of electrically neutral molecules with an ionic-covalent bond between Mn atoms and group VI elements takes place,...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2021
Main Authors: Ismailov, K.А., Iliev, X.M., Tursunov, M.O., Ismaylov, B.K.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
Subjects:
Semiconductor physics
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/216231
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon / K.А. Ismailov, X.M. Iliev, M.O. Tursunov, B.K. Ismaylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 3. — С. 255-260. — Бібліогр.: 12 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Similar Items

Similar Items