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Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

The formation of complexes of impurity Mn atoms with group VI impurities (S, Se, Te) in the silicon crystal lattice has been studied. It has been experimentally found that the formation of electrically neutral molecules with an ionic-covalent bond between Mn atoms and group VI elements takes place,...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2021
Hauptverfasser:	Ismailov, K.А., Iliev, X.M., Tursunov, M.O., Ismaylov, B.K.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/216231
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon / K.А. Ismailov, X.M. Iliev, M.O. Tursunov, B.K. Ismaylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 3. — С. 255-260. — Бібліогр.: 12 назв. — англ.

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