Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation
In this work, we have investigated the features of electron transport in AlGaN/GaN transistor-like heterostructures with nanowires of different widths. These nanostructures are studied extensively because of their great electronic and sensing advantages for electronic biosensor applications. We stud...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2021 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/216297 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation / A.V. Naumov, V.V. Kaliuzhnyi, S.A. Vitusevich, H. Hardtdegen, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 407-412. — Бібліогр.: 15 назв. — англ. |