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Phase transition in vanadium oxide films formed by multistep deposition

VOₓ films deposited using the multistep method have been investigated. These films were prepared by repeating the two-stage method of low-temperature deposition and low-temperature annealing. The structure and characteristics of VOₓ thin films have been studied. Taking into account the obtained resu...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2021
Hauptverfasser: Kladko, V.P., Melnik, V.P., Liubchenko, О.I., Romanyuk, B.M., Gudymenko, О.Yo., Sabov, Т.M., Dubikovskyi, О.V., Maksimenko, Z.V., Kosulya, О.V., Kulbachynskyi, O.A., Lytvyn, P.M., Efremov, О.O.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
Schlagworte:
Semiconductor physics
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/216302
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Phase transition in vanadium oxide films formed by multistep deposition / V.P. Kladko, V.P. Melnik, О.I. Liubchenko, B.M. Romanyuk, О.Yo. Gudymenko, Т.M. Sabov, О.V. Dubikovskyi, Z.V. Maksimenko, О.V. Kosulya, O.A. Kulbachynskyi, P.M. Lytvyn, О.O. Efremov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 362-371. — Бібліогр.: 38 назв. — англ.

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