Diffusion Processes in Ti–Si Systems during Silicide Formation
Two methods of creation of the TiSi₂(C54) stable phase are reviewed, and their comparison is considered. The formation of the structure of TiSi₂(C54) nanosize films on monocrystalline Si is studied. As shown, the TiSi₂(C54) formation is carried out faster (≅ 55 s) by low-energy thermion deposition (...
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| Datum: | 2013 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут металофізики ім. Г.В. Курдюмова НАН України
2013
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| Schriftenreihe: | Наносистеми, наноматеріали, нанотехнології |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/75923 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Diffusion Processes in Ti–Si Systems during Silicide Formation / S. E. Bogdanov, G. Beddies, M.Daniel, Yu.N. Makogon // Наносистеми, наноматеріали, нанотехнології: Зб. наук. пр. — К.: РВВ ІМФ, 2013. — Т. 11, № 2. — С. 295-302. — Бібліогр.: 7 назв. — анг. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Two methods of creation of the TiSi₂(C54) stable phase are reviewed, and their comparison is considered. The formation of the structure of TiSi₂(C54) nanosize films on monocrystalline Si is studied. As shown, the TiSi₂(C54) formation is carried out faster (≅ 55 s) by low-energy thermion deposition (LETD) of Ti on mono-Si than by magnetron sputtering with post-annealing of 150 s and more. As noted, the electrical-resistivity value for TiSi₂(C54) nanosize film deposited by LETD is equal to ρv = 13.5 μΩ∙cm, and with magnetron sputtering, it is equal to ρv = 24 μΩ∙cm. A phenomenological model for titanium disilicide formation on mono-Si by low-energy thermion deposition of titanium is proposed. |
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