Long-term relaxation of photoconductivity in cadmium doped Gd₂S₃ films

• Veröffentlicht in: Физическая инженерия поверхности
• Datum: 2011
• Hauptverfasser: Jabua, Z.U., Gigineishvili, A.V., Tabatadze, I.G., Kupreishvili, I.L.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Науковий фізико-технологічний центр МОН та НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/76139
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Long-term relaxation of photoconductivity in cadmium doped Gd₂S₃ films / Z.U. Jabua, A.V. Gigineishvili, I.G. Tabatadze, I.L. Kupreishvili // Физическая инженерия поверхности. — 2011. — Т. 9, № 1. — С. 44–47. — Бібліогр.: 10 назв. — англ.

In first time it is experimentally investigated some regularities of long-term relaxation of photoconductivity of gadolinium one-and-halp sulfides thin films doped by cadmium atoms. Was calculated maximum of recombination barrier and found the location of trapping levels in the gap. Вперше експериме...