Instabilities in binary compounds under irradiation
A simulation of radiation-induced instability in binary semiconductor, such as GaAs, was fulfilled. The instability is connected with antisite defects accumulated. It was shown that the number of antisite defects in crystal under irradiation can significantly exceed their equilibrium concentration....
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| Published in: | Вопросы атомной науки и техники |
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| Date: | 2000 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2000
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/78134 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Instabilities in binary compounds under irradiation / V.V. Mykhaylovskyy, V.I. Sugakov // Вопросы атомной науки и техники. — 2000. — № 4. — С. 10-13. — Бібліогр.: 15 назв. — англ. |