The low energy ribbon ion beam source and transport system
The ribbon ion beam can be used in the commercial ion implanters in order to enlarge the beam current. The Bernas type ion source and periodical system of electrostatic lenses (electrostatic undulator) are proposed for high intensity ion implanter design. The ribbon ion source and transport system...
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| Veröffentlicht in: | Вопросы атомной науки и техники |
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| Datum: | 2006 |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2006
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| Zitieren: | The low energy ribbon ion beam source and transport system / E.S. Masunov, S.M. Polozov, T.V. Kulevoy, V.I. Pershin // Вопросы атомной науки и техники. — 2006. — № 2. — С. 123-125. — Бібліогр.: 5 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859832438817030144 |
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| author | Masunov, E.S. Polozov, S.M. Kulevoy, T.V. Pershin, V.I. |
| author_facet | Masunov, E.S. Polozov, S.M. Kulevoy, T.V. Pershin, V.I. |
| citation_txt | The low energy ribbon ion beam source and transport system / E.S. Masunov, S.M. Polozov, T.V. Kulevoy, V.I. Pershin // Вопросы атомной науки и техники. — 2006. — № 2. — С. 123-125. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | The ribbon ion beam can be used in the commercial ion implanters in order to enlarge the beam current. The
Bernas type ion source and periodical system of electrostatic lenses (electrostatic undulator) are proposed for high
intensity ion implanter design. The ribbon ion source and transport system for such beam are discussed.
Ленточные ионные пучки могут быть применены в коммерческих ионных имплантерах для увеличения тока пучка. Для создания сильноточного имплантора предлагается использовать ионный источник Берна и периодическую систему электростатических линз (электростатический ондулятор). Обсуждаются выбор источника ленточного ионного пучка и система его транспортировки.
Стрічкові іонні пучки можуть бути застосовані в комерційних іонних імплантерах для збільшення струму
пучка. Для створення потужнострумового імплантора пропонується використати іонне джерело Берна й
періодичну систему електростатичних лінз (електростатичний ондулятор). Обговорюються вибір джерела
стрічкового іонного пучка й система його транспортування.
|
| first_indexed | 2025-12-07T15:32:46Z |
| format | Article |
| fulltext |
THE LOW ENERGY RIBBON ION BEAM SOURCE
AND TRANSPORT SYSTEM*
E.S. Masunov1, S.M. Polozov1, T.V. Kulevoy2, V.I. Pershin2
1Moscow Engineering Physics Institute, Moscow, Russia,
2Institute of Theoretical and Experimental Physics, Moscow, Russia
E-mail: masunov@dinus.mephi.ru, fax/phone: +7(095) 324-2111/324-2995
The ribbon ion beam can be used in the commercial ion implanters in order to enlarge the beam current. The
Bernas type ion source and periodical system of electrostatic lenses (electrostatic undulator) are proposed for high
intensity ion implanter design. The ribbon ion source and transport system for such beam are discussed.
PACS: 29.25.Ni, 61.72.Tt
1. INTRODUCTION
Over the past forty years, the breath of applications
for ion implantation in semiconductors (usually silicon)
has created a commercial equipment market that ap-
proaches about two billion dollars per year [1,2]. The
ion source, its extraction and transport system are the
key components of any ion implanter. As there is no
universal ion source, each implanter is built around a
source, or sources, to provide the ion species and beam
currents required by any particular user of the implanter.
At the beginning, the cold cathode ion sources with
“low currents” were used for mushiness for early MOS
(Metal-Oxide-Semiconductor) circuit fabrication, which
requires doses of 1011…1012 ions cm-2. The use of hot
filament ion source technology with currents of tens of
milliamperes followed some years later, when ion im-
plantation was applied to MOS transistor source-drain
formation (which required doses 1015…1016 ions cm-2).
Because they are simple and robust, hot filament ion
sources are employed in the majority of all commercial
ion implanters.
Fig.1. The general view of electrostatic undulator
The transport of the low energy multicharge heavy
ions is problem. The choice of effective beam transport
system design depends on main beam parameters: an
initial transverse emittance, an ion energy, a charge to
mass ratio, beam current. Generally, the magnetic and
electrostatic lenses are used for axi-symmetrical beam
focusing. The magnetic lenses for low energy ion must
to have the high magnetic fields. For transport of inten-
sive ribbon ion beams special beam line is needed. In
this paper a periodic system of the plane electrostatic
lenses (electrostatic undulator) (see Fig.1) is suggested
for this goal. This system has simple design and low
value of electrostatic potential is necessary for beam
transport.
2. ION SOURCE TYPE CHOISE
Two basic designs for the hot filament source com-
prise the majority of ion sources in semiconductor pro-
duction environments now: the Freeman source [3] and
the Bernas ion source [4]. These sources have very simi-
lar operating and maintenance requirements. The indi-
rectly heated cathode (IHC) source representing an im-
provement over the Bernas ion source operates on simi-
lar principals; however the filament has been removed
from the chemical environment of the plasma chamber
leading to longer lifetime. In Table, taken from [1], one
can see that IHC Bernas has serious advantage for the
same current beam production.
Ion sources in semiconductor production environments
Source
type
Primary
species
Beam cur-
rent, mA
Operating
hours
Bernas
B+ 5 80
B+ 10 40
As+, P+ 5 140
As+, P+ 10 100
Sb+ 5…10 40…50
Freeman
B+ 5 30…40
B+ 10 15…25
As+, P+ 5 40…60
As+, P+ 10 30…40
Sb+ 5…10 20…40
IHC
Bernas
B+ 5 150
B+ 10 100
As+, P+ 5 250
As+, P+ 10 200
Sb+ 5…10 80…100
* The work was supported by RFBR: Grant 04-02-16667
__________________________________________________________
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2006. № 2.
Series: Nuclear Physics Investigations (46), p.123-125. 123
mailto:masunov@dinus.mephi.ru
3. PARTICLE MOTION IN ELECTROSTAT-
IC UNDULATOR
The potential of electrostatic field in periodic undu-
lator can be represented as a sum of the spatial harmon-
ics. The interaction of the particles with the every har-
monics of the undulator field does not change the aver-
age energy of the beam but causes the fast oscillations
in the longitudinal and transverse directions. A momen-
tum and a coordinate of particles can be represented as a
sum of slow varying and rapid oscillating components.
The ion limit current for any value of charge to mass ra-
tio can be appreciated by smooth approximation when
the slow varying component is taken to account only
[5]. As it was shown in [5] the condition of the trans-
verse focusing for ribbon beam is taken place if
SI
ID
Z
A
mc
eV
απ
β≥
22
24
. (1)
Here, eZ and mA are charge and mass of ion, V is the
electrode voltage which is applied to the neighboring
electrodes of the undulator, β is ion velocity,
73
0 101.3/4 ⋅=π ε=α emcI A, I is the beam current and
S is the beam cross-section.
Note that limit beam current can be increased using
of ribbon beam because its cross-section is larger than
for axisymmetric one. For example, if the ribbon beam
current is equal to I=10 mA for β=0.001 and beam
cross-section is 2a×2b=0.3×3.0 cm, the amplitude of
electrostatic field at undulator axis DVE 2/0 π= must
be equal to 10 kV/cm. The limit beam current is
0.75 mA for axisymmetric beam for the same 0E value
and rb=0.15 cm, comparatively.
The limit beam current and transmission coefficient
can be accurate calculated by means of a numerical sim-
ulation only. Early the BEAMDULAC code was com-
puted for beam dynamics simulations in linacs. Now the
special version of this code has been adapted for beam
lines using electrostatic undulator. This code utilizes the
well-known Cloud-in-Cell (CIC) method for accurate
treat of space charge effects.
It was shown using BEAMDULAC code that low
velocity beams (β=0.001) with current I=1…10 mA can
be transported to the some meters using electrostatic un-
dulator. The amplitude of undulator field Е0 must be
equal to 12…14 kV/cm for ions with charge to mass ra-
tio range A/Z=10…120. The current transmission coeffi-
cient is 100% in this case and high output beam quality
can be derived.
The beam dynamics simulation results are shown in
Fig.2. The input (small points) and output (large points)
beam transverse cross-section (a) and transverse emit-
tances (x,βx) and (y,βy) are presented. The beam dynam-
ics was calculated for boron ions energy 3 keV and
beam current 10 mA.
4. PRELIMINARY RESULTS OF RESEARCH
In ITEP the common ITEP-MEPhI research program
of ion beam generation for ion implanters is carried on.
The IHC Bernas is the main ion source for this research
Fig.2. Ion beam dynamics simulation results
Fig.3. The general view and electrical scheme of the
IHC Bernas ion source
__________________________________________________________
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2006. № 2.
Series: Nuclear Physics Investigations (46), p.123-125. 123
Fig.4. ITEP IHC Bernas ion sour
program. The general view and electrical scheme of the
ion source and its photo are shown in Figs.3 and 4. The
spectrum of phosphorus and antimony beams generated
by ITEP IHC Bernas is shown in Fig.5.
The ion source generates beams of antimony, phos-
phorus, boron and decaborane (B10H14). The antimony,
phosphorus, and boron beams are investigated for multi-
charge state ions generation, which are interested for
“high energy” implantation. However, last time progres-
sive semiconductor device scaling in each technology
node requires the formation of shallower junctions, and
thus lower energy implants. The continuing need to re-
duce implantation energies creates significant chal-
lenges for the designer of advanced implanters. Current
density limitations associated with extracting and trans-
porting of low energy ion beams results in lower beam
currents that adversely affects on the process throughput.
Fig.5. Spectrum of phosphorus ion beam
The ITEP-MEPhI research program includes two di-
rections of overcoming the low energy beam transporta-
tion problem. One is to use the boron cluster beams
(like decaborane). The second is to construct the low en-
ergy transport undulator for monomer boron and phos-
phorus beams.
5. CONCLUSION
The new concent of ion beam source and beam
transport was discussed. It was shown that using of
Bernas ion source and electrostatic undulator allows de-
signing the low beta (β=10-4-10-3) high intensity ion im-
planter.
REFERENCES
1. J.F. Ziegler. Ion Implantation – Science and Tech-
nology. Ion Implantation Technology Co., Edgewa-
ter, Maryland, 1996.
2. H. Freeman. Heavy-ion sources: The Star, or the
Cinderella, of the ion-implantation firmament? //
Res. Sci. Instr. 2000, v.71, №2, p.603-611.
3. J. Freeman. A New Ion Source for Electromagnetic
Isotope Separators // Nucl. Instr. and Methods.
1963, v.22, p.306.
4. N. White. Ion Sources for Use in Ion Implantation
// Nucl. Instr. and Methods. 1989, v.B37/38, p.78.
5. E.S. Masunov, S.M. Polozov. Low energy beam
transport for heavy ions in electrostatic undulator.
Proc. of RuPAC2004. 2004, p.225-227.
ИСТОЧНИК И СИСТЕМА ТРАНСПОРТИРОВКИ НИЗКОЭНЕРГЕТИЧЕСКОГО ЛЕНТОЧНОГО
ИОННОГО ПУЧКА
Э.С. Масунов, С.М. Полозов, Т.В. Кулевой, В.И. Першин
Ленточные ионные пучки могут быть применены в коммерческих ионных имплантерах для увеличения
тока пучка. Для создания сильноточного имплантора предлагается использовать ионный источник Берна и
периодическую систему электростатических линз (электростатический ондулятор). Обсуждаются выбор ис-
точника ленточного ионного пучка и система его транспортировки.
ДЖЕРЕЛО Й СИСТЕМА ТРАНСПОРТУВАННЯ НИЗЬКОЕНЕРГЕТИЧНОГО СТРІЧКОВОГО
ІОННОГО ПУЧКА
Е.С. Масунов, С.М. Полозов, Т.В. Кулевой, В.І. Першин
Стрічкові іонні пучки можуть бути застосовані в комерційних іонних імплантерах для збільшення струму
пучка. Для створення потужнострумового імплантора пропонується використати іонне джерело Берна й
періодичну систему електростатичних лінз (електростатичний ондулятор). Обговорюються вибір джерела
стрічкового іонного пучка й система його транспортування.
116
Bernas
|
| id | nasplib_isofts_kiev_ua-123456789-78872 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T15:32:46Z |
| publishDate | 2006 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Masunov, E.S. Polozov, S.M. Kulevoy, T.V. Pershin, V.I. 2015-03-22T09:03:47Z 2015-03-22T09:03:47Z 2006 The low energy ribbon ion beam source and transport system / E.S. Masunov, S.M. Polozov, T.V. Kulevoy, V.I. Pershin // Вопросы атомной науки и техники. — 2006. — № 2. — С. 123-125. — Бібліогр.: 5 назв. — англ. 1562-6016 PACS: 29.25.Ni, 61.72.Tt https://nasplib.isofts.kiev.ua/handle/123456789/78872 The ribbon ion beam can be used in the commercial ion implanters in order to enlarge the beam current. The Bernas type ion source and periodical system of electrostatic lenses (electrostatic undulator) are proposed for high intensity ion implanter design. The ribbon ion source and transport system for such beam are discussed. Ленточные ионные пучки могут быть применены в коммерческих ионных имплантерах для увеличения тока пучка. Для создания сильноточного имплантора предлагается использовать ионный источник Берна и периодическую систему электростатических линз (электростатический ондулятор). Обсуждаются выбор источника ленточного ионного пучка и система его транспортировки. Стрічкові іонні пучки можуть бути застосовані в комерційних іонних імплантерах для збільшення струму пучка. Для створення потужнострумового імплантора пропонується використати іонне джерело Берна й періодичну систему електростатичних лінз (електростатичний ондулятор). Обговорюються вибір джерела стрічкового іонного пучка й система його транспортування. The work was supported by RFBR: Grant 04-02-16667. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Линейные ускорители заряженных частиц The low energy ribbon ion beam source and transport system Источник и система транспортировки низкоэнергетического ленточного ионного пучка Джерело й система транспортування низькоенергетичного стрічкового іонного пучка Article published earlier |
| spellingShingle | The low energy ribbon ion beam source and transport system Masunov, E.S. Polozov, S.M. Kulevoy, T.V. Pershin, V.I. Линейные ускорители заряженных частиц |
| title | The low energy ribbon ion beam source and transport system |
| title_alt | Источник и система транспортировки низкоэнергетического ленточного ионного пучка Джерело й система транспортування низькоенергетичного стрічкового іонного пучка |
| title_full | The low energy ribbon ion beam source and transport system |
| title_fullStr | The low energy ribbon ion beam source and transport system |
| title_full_unstemmed | The low energy ribbon ion beam source and transport system |
| title_short | The low energy ribbon ion beam source and transport system |
| title_sort | low energy ribbon ion beam source and transport system |
| topic | Линейные ускорители заряженных частиц |
| topic_facet | Линейные ускорители заряженных частиц |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/78872 |
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