Large-area surface wave plasma source
A surface wave plasma source for the production of a large-diameter, high electron density and low electron temperature plasma at low pressure without using a magnetic field for plasma processing and thin film preparation are. The DC or RF voltage with the frequency of 13.56 MHz can supply the sourc...
Gespeichert in:
| Veröffentlicht in: | Вопросы атомной науки и техники |
|---|---|
| Datum: | 2002 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2002
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/79286 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Large-area surface wave plasma source / N.A. Azarenkov, A.A. Bizyukov, A.V. Gapon, A.Y. Kashaba, K.N. Sereda, A.Ph. Tseluyko, N.N. Yunakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 118-120. — Бібліогр.: 6 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-79286 |
|---|---|
| record_format |
dspace |
| spelling |
Azarenkov, N.A. Bizyukov, A.A. Sereda, K.N. Tseluyko, A.Ph. Yunakov, N.N. Gapon, A.V. Kashaba, A.Y. 2015-03-30T09:37:26Z 2015-03-30T09:37:26Z 2002 Large-area surface wave plasma source / N.A. Azarenkov, A.A. Bizyukov, A.V. Gapon, A.Y. Kashaba, K.N. Sereda, A.Ph. Tseluyko, N.N. Yunakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 118-120. — Бібліогр.: 6 назв. — англ. 1562-6016 PACS: 52.50.Dg https://nasplib.isofts.kiev.ua/handle/123456789/79286 A surface wave plasma source for the production of a large-diameter, high electron density and low electron temperature plasma at low pressure without using a magnetic field for plasma processing and thin film preparation are. The DC or RF voltage with the frequency of 13.56 MHz can supply the source. The pumping-out of the source is carried out through the insulated substrate holder. The plasma source operates in a working gas pressure range of 3∙10⁻² ÷ 10⁻⁴ Torr with changing the RF power in a range of 50÷1000 W during the discharge on surface waves with the mode 0 excited by a ring antenna. The plasma density has a homogeneous distribution over a diameter of 300 mm and varies in a range of 10⁸÷10¹⁰ cm⁻³ at electron temperature of 2÷7 eV depending on external parameters. An ion beam density in the presence of the RF bias applied to the substrate holder reached 0.1 mA/сm² with homogeneous distribution over the diameter of 300 mm. The total ion current to the substrate holder with a diameter of 467 mm reaches the value of 2 A with average ion energy of 200 eV. Numerical analysis of electric field distribution over the processing chamber in linear approach was made and compared to experimental results obtained. This work was supported by Scientific Technical Centre of Ukraine, Project #1112. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Low temperature plasma and plasma technologies Large-area surface wave plasma source Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Large-area surface wave plasma source |
| spellingShingle |
Large-area surface wave plasma source Azarenkov, N.A. Bizyukov, A.A. Sereda, K.N. Tseluyko, A.Ph. Yunakov, N.N. Gapon, A.V. Kashaba, A.Y. Low temperature plasma and plasma technologies |
| title_short |
Large-area surface wave plasma source |
| title_full |
Large-area surface wave plasma source |
| title_fullStr |
Large-area surface wave plasma source |
| title_full_unstemmed |
Large-area surface wave plasma source |
| title_sort |
large-area surface wave plasma source |
| author |
Azarenkov, N.A. Bizyukov, A.A. Sereda, K.N. Tseluyko, A.Ph. Yunakov, N.N. Gapon, A.V. Kashaba, A.Y. |
| author_facet |
Azarenkov, N.A. Bizyukov, A.A. Sereda, K.N. Tseluyko, A.Ph. Yunakov, N.N. Gapon, A.V. Kashaba, A.Y. |
| topic |
Low temperature plasma and plasma technologies |
| topic_facet |
Low temperature plasma and plasma technologies |
| publishDate |
2002 |
| language |
English |
| container_title |
Вопросы атомной науки и техники |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| format |
Article |
| description |
A surface wave plasma source for the production of a large-diameter, high electron density and low electron temperature plasma at low pressure without using a magnetic field for plasma processing and thin film preparation are. The DC or RF voltage with the frequency of 13.56 MHz can supply the source. The pumping-out of the source is carried out through the insulated substrate holder. The plasma source operates in a working gas pressure range of 3∙10⁻² ÷ 10⁻⁴ Torr with changing the RF power in a range of 50÷1000 W during the discharge on surface waves with the mode 0 excited by a ring antenna. The plasma density has a homogeneous distribution over a diameter of 300 mm and varies in a range of 10⁸÷10¹⁰ cm⁻³ at electron temperature of 2÷7 eV depending on external parameters. An ion beam density in the presence of the RF bias applied to the substrate holder reached 0.1 mA/сm² with homogeneous distribution over the diameter of 300 mm. The total ion current to the substrate holder with a diameter of 467 mm reaches the value of 2 A with average ion energy of 200 eV. Numerical analysis of electric field distribution over the processing chamber in linear approach was made and compared to experimental results obtained.
|
| issn |
1562-6016 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/79286 |
| citation_txt |
Large-area surface wave plasma source / N.A. Azarenkov, A.A. Bizyukov, A.V. Gapon, A.Y. Kashaba, K.N. Sereda, A.Ph. Tseluyko, N.N. Yunakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 118-120. — Бібліогр.: 6 назв. — англ. |
| work_keys_str_mv |
AT azarenkovna largeareasurfacewaveplasmasource AT bizyukovaa largeareasurfacewaveplasmasource AT seredakn largeareasurfacewaveplasmasource AT tseluykoaph largeareasurfacewaveplasmasource AT yunakovnn largeareasurfacewaveplasmasource AT gaponav largeareasurfacewaveplasmasource AT kashabaay largeareasurfacewaveplasmasource |
| first_indexed |
2025-11-25T21:07:14Z |
| last_indexed |
2025-11-25T21:07:14Z |
| _version_ |
1850545113222086656 |
| fulltext |
LOW TEMPERATURE PLASMA AND PLASMA TECHNOLOGIES
LARGE-AREA SURFACE WAVE PLASMA SOURCE
N.A. Azarenkov, A.A. Bizyukov, A.V. Gapon, A.Y. Kashaba, K.N. Sereda, A.Ph. Tseluyko,
N.N. Yunakov
Kharkiv National University, Kharkiv, Ukraine, 61108,
E-mail: bizyukov@pht.univer.kharkov.ua
A surface wave plasma source for the production of a large-diameter, high electron density and low electron
temperature plasma at low pressure without using a magnetic field for plasma processing and thin film preparation are.
The DC or RF voltage with the frequency of 13.56 MHz can supply the source. The pumping-out of the source is
carried out through the insulated substrate holder. The plasma source operates in a working gas pressure range of
Torr42 10103 −− ÷⋅ with changing the RF power in a range of 50÷1000 W during the discharge on surface waves with
the mode 0 excited by a ring antenna. The plasma density has a homogeneous distribution over a diameter of 300 mm
and varies in a range of 108÷1010 cm-3 at electron temperature of 2÷7 eV depending on external parameters. An ion beam
density in the presence of the RF bias applied to the substrate holder reached 0.1 mA/сm2 with homogeneous
distribution over the diameter of 300 mm. The total ion current to the substrate holder with a diameter of 467 mm
reaches the value of 2 A with average ion energy of 200 eV. Numerical analysis of electric field distribution over the
processing chamber in linear approach was made and compared to experimental results obtained.
PACS: 52.50.Dg
1. INTRODUCTION
Low pressure (less than 10 mTorr), high-density
(more than 109 cm-3) plasma sources which produce
uniform (less than 5%) densities of ions and radicals over
large areas (more than 300 mm diameter) have recently
been important for plasma etching and deposition
technology in the fabrication of ultralarge-scale integrated
(ULSI) circuits with deep submicron features [1, 2].
Among the various types of plasmas (inductively coupled
plasma (ICP), electron cyclotron resonance (ECR)
plasma, helicon, etc. [3] ), surface-wave plasmas (SWPs)
are one of the most promising candidates from the
viewpoints of cost performance, compactness and
feasibility of enlargment of high density homogeneous
plasmas [4].
This paper presents a surface wave plasma source
for the production of high-density plasma over large areas
without a magnetic field for plasma processing and thin
film preparation.
Fig. 1. Schematic diagram of the plasma source.
1 – housing ; 2-flat ring electrode; 3, 4 – dielectric
plates; 5 – cylindrical ring electrode; 6 – gridded
electrode, 7 – substrate holder
2. EXPERIMENTAL
The plasma source consists of a cylindrical housing
made of stainless steel, flat and cylindrical ring
electrodes, two round flat dielectric plates, high-frequency
electrical vacuum lead-ins, insulated substrate holder. The
internal diameter of the housing is 505 mm, height is
215 mm, thickness of end wall is 10 mm. The flat ring
electrode, which geometrical sizes can vary, is placed on
the interior side of the end wall between two round flat
dielectric plates with the diameter of 502 mm and
thickness of 4 mm. The cylindrical ring electrode with an
internal diameter of 492 mm and height of 80 mm has a
wall thickness of 3 mm and is arranged coaxially to the
housing near the end wall. Both flat, and the cylindrical
ring electrodes with excitation of surface waves with
different modes can serve as antenna. The insulated
substrate holder with the maximum diameter of 498 mm is
arranged on an opposite end of the housing. In some
experiments, to extract the ions from the discharge
volume the gridded electrode with a diameter of 460 mm
made stainless steel is disposed from above of the
cylindrical electrode. The transparency of the gridded
electrode is approximately 50%. The distance between the
end of the cylindrical electrode and gridded electrode can
also vary from 0 up to 100 mm. The DC or RF voltage
with the frequency of 13.56 MHz can be supplied to flat
or cylindrical ring electrodes. The plasma source is
mounted on the modernized vacuum chamber of base
vacuum installation such as UVN which allows to
perform preliminary source evacuation to residual
pressure 5×10-6 Torr. The gas inlet system allows to
support working gas pressure in range of 10-1÷10-5 Torr.
118 Problems of Atomic Science and Technology. 2002. №5. Series: Plasma Physics (8). P. 118-120
3. RESULTS AND DISCUSSION
The plasma source operates in a working gas pressure
range of Torr42 10103 −− ÷⋅ with changing the RF power
in a range of 50÷1000 W during the discharge on surface
waves with the mode 0 excited by a flat ring electrode-
antenna. In the selected geometry the conditions are
suitable for launching of the surface wave sustained
discharge. The probe measurements indicate that the
plasma density has a homogeneous distribution over a
diameter of 300 mm and varies in a range of 108÷1010 cm-3
at electron temperature of 2÷7 eV depending on external
parameters. Fig 2. shows plasma density distribution and
electron temperature along radial direction of the system.
Fig 3. shows dependence of plasma density and electron
temperature on the input power. An ion beam density in
the presence of the RF bias applied to the substrate
holder, which was studied by the system of flat
directional probes, reached 0.1 mA/сm2 with
homogeneous distribution over the diameter of 300 mm.
In the case of applying the positive DC bias to the
cylindrical electrode, the dependencies of ion current to
the substrate holder at typical external working
parameters of the plasma source has linear character
within the range of DC bias from 0 to 1000 V. The spatial
distribution of ion current density is homogeneous over a
diameter of 300 mm. The total ion current to the substrate
holder with a diameter of 467 mm reaches the value of
2 A with average ion energy of 200 eV.
The carbon films with the evident diamond-like
properties was synthesized on the glassceramic substrate
surface from a mixture of cyclohexane and hydrogen.
The calculation of an RF-field was carried out using
the configuration similar to the planar reactor. In spite of
the fact that an electric field is enough for ionization
maintenance, the linear approach is traditional for
amplitude distribution calculation and dispersion
characteristics [4 - 6]. Since length of an electromagnetic
wave in vacuum for used frequency m10∝λ for
frequency wave 13.56 MHz a quasistationary condition
was satisfied ( L> >λ , L - the size of considered region)
and one can consider that electric field is potential.
Considering that the time dependence of unknown
fields ),( tru
is specified by applied RF field as
)exp()(),( tirUtru ω
= (cyclic frequency π νω 2= ,
where ν - the generator frequency), the equation for an
RF-potential can be written in the following view:
Q
vt πψ
ω
ψε 4)( 4
2
2
−=∇+∇∇ , (1)
where
)(
1
2
coll
p
iνωω
ω
ε
+
−= - plasma permittivity, Q -
extraneous charge density, collν - effective electron
collision frequency.
The regional conditions were chosen as in ref. [6]:
02
2
2 =
−∇∇
S
p
t
p
p v
n ψ
ω
ψ
, (2)
0=∇−∇
Sddp nn ψεψ
, (3)
where n
- normal line to an interface S, pψ - RF
potential in plasma, dψ - potential in a dielectric.
The solution was found numerically using finite-
difference equations obtained by a method of the streams
[6]. Fig. 4 shows the potential distribution normalized by
peak value for conditions similar to experimental one.
The plasma permittivity varies in range from minimum
value –100 up to the 1 near the boundary. Potential
reaches the greatest value on the surface where the plasma
resonance condition is satisfied.
Far from the antenna the potential distribution is
nearly the natural solution of the equation (1). The
significant voltage dropping toward the axis is distinct
that has been found out experimentally. Taking into
account electron pressure here is essential. The identical
potential profile was calculated using cold plasma
approach and is shown in Fig. 5 for comparison with
previous one.
0 4 8 12 16 20 24
0
2
4
6
n
i
r , см
T e ,
эВ
0
2
4
6
T
e
n
i × 10
8 , см
-3
0 100 200 300
4
6
8
10
ВЧ-мощность, Вт
T e ,
эВ
0
2
4
6
n
i
T
e
n
i × 10
8 , см
-3
Fig 2. Ion density and electron temperature
distribution along radial direction of the system.
3102 −⋅=p Torr, 100=RFP W, working gas was argon
Fig. 3. Dependencies of plasma density and electron
temperature on the input power. 3102 −⋅=p Torr, working
gas was argon
119
Fig. 4. Electron temperature Te=5 eV, distance between
glass disks d=3 cm, ro=20 cm, zo=0.4 cm
Fig. 5. Cold plasma approach. Geometrical factors see
on caption for Fig.4
4. CONCLUSIONS
A surface wave plasma source for the production of a
large-diameter, high electron density and low electron
temperature plasma at low pressure without using a
magnetic field for plasma processing and thin film
preparation are. The DC or RF voltage with the frequency
of 13.56 MHz can supply the source. Numerical analysis
of electric field distribution over the processing chamber
in linear approach was made and compared to
experimental results obtained.
5. ACKNOWLEDGMENTS
This work was supported by Scientific Technical
Centre of Ukraine, Project #1112.
REFERENCES
1.ULSI Technology, ed. C.Y. Chang and S.M. Sze, New
York: «Mc Graw-Hill», 1996.
2.M.A. Lieberman, A.J. Lichtenberg, Principles of
Plasma Discharges and Materials Processing, New
York, «Wiley-Interscience», 1994.
3.High Density Plasma Sources, Design, Physics and
Performance, ed. O.A. Popov, New York, «Noyes
Publication», 1995.
4.Microwave Discharges, Fundamentals and
Applications, eds. C.M. Ferreira and M. Moisan, Nato
ASI Series, Series B, Physics 302, New York, London,
«Plenum Press», 1993.
5.A.N.Kondratenko. Surface and volumetric waves in
bounded plasma. Moscow, Energoatomizdat, 1985,
p.207(in Russian).
6.Kroll N., Trajvelpis A. Basics of Plasma Physics,
(Transl. From English), Мoscow, Mir, 1975, p.525.
120
E-mail: bizyukov@pht.univer.kharkov.ua
References
|