Radiation destruction and internal friction in silicon single crystals
The study of radiation defects in silicon single crystals of different orientation is carried out by means of methods of internal friction (IF) and electrical resistance. At the mechanical damping measurement a strategy of low-frequency flexible oscillations (f ~ 5 Hz) was used during the process of...
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| Date: | 2004 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2004
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| Series: | Вопросы атомной науки и техники |
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/79390 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Radiation destruction and internal friction in silicon single crystals / V.D. Ryzhikov, N.Ya. Rokhmanov, S.N. Galkin, A.K. Gnap // Вопросы атомной науки и техники. — 2004. — № 2. — С. 180-182. — Бібліогр.: 9 назв. — англ. |