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Radiation destruction and internal friction in silicon single crystals

The study of radiation defects in silicon single crystals of different orientation is carried out by means of methods of internal friction (IF) and electrical resistance. At the mechanical damping measurement a strategy of low-frequency flexible oscillations (f ~ 5 Hz) was used during the process of...

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Bibliographic Details
Published in:Вопросы атомной науки и техники
Date:2004
Main Authors: Ryzhikov, V.D., Rokhmanov, N.Ya., Galkin, S.N., Gnap, A.K.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2004
Subjects:
Применение ускоренных пучков
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/79390
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Radiation destruction and internal friction in silicon single crystals / V.D. Ryzhikov, N.Ya. Rokhmanov, S.N. Galkin, A.K. Gnap // Вопросы атомной науки и техники. — 2004. — № 2. — С. 180-182. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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