Radiation-induced pocesses in A²B⁶ oxide compounds under proton and gamma-irradiation

• Published in: Вопросы атомной науки и техники
• Date: 2005
• Main Authors: Starzhinskiy, N.G., Ryzhikov, V.D., Gal’chinetskii, L.P., Nagornaya, L.L., Silin, V.I.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2005
• Subjects: Физика радиационных повреждений и явлений в твердых телах
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/80407
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Radiation-induced pocesses in A²B⁶ oxide compounds under proton and gamma-irradiation / N.G. Starzhinskiy, V.D. Ryzhikov, L.P. Gal’chinetskii, L.L. Nagornaya, V.I. Silin // Вопросы атомной науки и техники. — 2005. — № 3. — С. 43-46. — Бібліогр.: 5 назв. — англ.

Changes in scintillation and optical properties of semiconductor scintillators (SCS) based on ZnSe(O,Te), ZnSe(Cd), ZnCdS(Te), ZnSSe(Te) and CdWO₄ (CWO) crystals were studied under influence of ionizing radiations: gamma (~1.3 MeV, up to 500 Mrad), protons (~18 MeV, fluence up to 10¹⁶per⋅cm ⁻² ), el...