Stabilization of thermal breakdown development in semiconductor films
The analysis of fixed points of the evolution equation for temperature in thermal fluctuation area in semiconductor film is done. It is shown that there exists a stable fixed point being more than the threshold of the breakdown regime development. Проведено аналiз нерухомих точок еволюцiйного рiвн...
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| Published in: | Вопросы атомной науки и техники |
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| Date: | 2004 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2004
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/80553 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Stabilization of thermal breakdown development in semiconductor films / N.V. Andreyeva, Yu.P. Virchenko // Вопросы атомной науки и техники. — 2004. — № 5. — С. 126-128. — Бібліогр.: 2 назв. — англ. |