Degradations of semiconductor devices under pulsed heat overloading
The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal dependencies of the temperature under different forms of pulse of current are obtained.
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| Published in: | Вопросы атомной науки и техники |
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| Date: | 2000 |
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| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2000
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/82375 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Degradations of semiconductor devices under pulsed heat overloading / V.I. Chumakov // Вопросы атомной науки и техники. — 2000. — № 3. — С. 96-98. — Бібліогр.: 7 назв. — англ. |