Degradations of semiconductor devices under pulsed heat overloading
The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal dependencies of the temperature under different forms of pulse of current are obtained.
Gespeichert in:
| Veröffentlicht in: | Вопросы атомной науки и техники |
|---|---|
| Datum: | 2000 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2000
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/82375 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Degradations of semiconductor devices under pulsed heat overloading / V.I. Chumakov // Вопросы атомной науки и техники. — 2000. — № 3. — С. 96-98. — Бібліогр.: 7 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862726837175582720 |
|---|---|
| author | Chumakov, V.I. |
| author_facet | Chumakov, V.I. |
| citation_txt | Degradations of semiconductor devices under pulsed heat overloading / V.I. Chumakov // Вопросы атомной науки и техники. — 2000. — № 3. — С. 96-98. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal dependencies of the temperature under different forms of pulse of current are obtained.
|
| first_indexed | 2025-12-07T18:59:33Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-82375 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T18:59:33Z |
| publishDate | 2000 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Chumakov, V.I. 2015-05-29T07:28:09Z 2015-05-29T07:28:09Z 2000 Degradations of semiconductor devices under pulsed heat overloading / V.I. Chumakov // Вопросы атомной науки и техники. — 2000. — № 3. — С. 96-98. — Бібліогр.: 7 назв. — англ. 1562-6016 https://nasplib.isofts.kiev.ua/handle/123456789/82375 621.382 The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal dependencies of the temperature under different forms of pulse of current are obtained. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Рlasma Dynamics and Plasma-Wall Interaction Degradations of semiconductor devices under pulsed heat overloading Article published earlier |
| spellingShingle | Degradations of semiconductor devices under pulsed heat overloading Chumakov, V.I. Рlasma Dynamics and Plasma-Wall Interaction |
| title | Degradations of semiconductor devices under pulsed heat overloading |
| title_full | Degradations of semiconductor devices under pulsed heat overloading |
| title_fullStr | Degradations of semiconductor devices under pulsed heat overloading |
| title_full_unstemmed | Degradations of semiconductor devices under pulsed heat overloading |
| title_short | Degradations of semiconductor devices under pulsed heat overloading |
| title_sort | degradations of semiconductor devices under pulsed heat overloading |
| topic | Рlasma Dynamics and Plasma-Wall Interaction |
| topic_facet | Рlasma Dynamics and Plasma-Wall Interaction |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/82375 |
| work_keys_str_mv | AT chumakovvi degradationsofsemiconductordevicesunderpulsedheatoverloading |