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Degradations of semiconductor devices under pulsed heat overloading

The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal dependencies of the temperature under different forms of pulse of current are obtained.

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Bibliographic Details
Published in:	Вопросы атомной науки и техники
Date:	2000
Main Author:	Chumakov, V.I.
Format:	Article
Language:	English
Published:	Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2000
Subjects:	Рlasma Dynamics and Plasma-Wall Interaction
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/82375
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Degradations of semiconductor devices under pulsed heat overloading / V.I. Chumakov // Вопросы атомной науки и техники. — 2000. — № 3. — С. 96-98. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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