Plasma potential influence on ion energy Distribution function in ICP source
In this work, the deviation of energy distribution function of energetic ions from the predetermined
 value in an inductively coupled plasma (ICP) ion gun source is discussed. An abnormal plasma potential
 increase at an extraction voltage 400 V caused a beam energy shift of up to 50...
Gespeichert in:
| Veröffentlicht in: | Физическая инженерия поверхности |
|---|---|
| Datum: | 2007 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Науковий фізико-технологічний центр МОН та НАН України
2007
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/98816 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Plasma potential influence on ion energy Distribution function in ICP source / O.V. Vozniy, G.Y. Yeom, A.Yu. Kropotov // Физическая инженерия поверхности. — 2007. — Т. 5, № 1-2. — С. 28–33. — Бібліогр.: 21 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860217063547600896 |
|---|---|
| author | Vozniy, O.V. Yeom, G.Y. Kropotov, A.Yu. |
| author_facet | Vozniy, O.V. Yeom, G.Y. Kropotov, A.Yu. |
| citation_txt | Plasma potential influence on ion energy Distribution function in ICP source / O.V. Vozniy, G.Y. Yeom, A.Yu. Kropotov // Физическая инженерия поверхности. — 2007. — Т. 5, № 1-2. — С. 28–33. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Физическая инженерия поверхности |
| description | In this work, the deviation of energy distribution function of energetic ions from the predetermined
value in an inductively coupled plasma (ICP) ion gun source is discussed. An abnormal plasma potential
increase at an extraction voltage 400 V caused a beam energy shift of up to 50 eV compared to the
preset value. The ion energy peak position was found to be more affected by pressure at higher
extraction voltages on the acceleration grid.
У даній роботі обговорюється відхилення функції розподілу по енергіях прискорених іонів від
установленого значення в джерелі на основе ВЧІ
розряду. Аномальне збільшення потенціала плазми при значенні прискорючого напруження 400 В
викликало зсув енергії пучка убік великих значень
на величину до 50 еВ. При цьому було виявлено,
що положення максимуму функції розподілу
залежило від тиску в більшому ступені при більш
високих значеннях прискорючого напруження.
В данной работе обсуждается отклонение функции распределения по энергиямускоренных ионов
от установленного значения в источнике на основе ВЧИ разряда. Аномальное увеличение потенциала плазмы при значении ускоряющего напряжения 400 В вызывало смещение энергии
пучка в сторону больших значений на величину
до 50 эВ. При этом было обнаружено, что положение максимума функции распределения зависело от давления в большей степени при более
высоких значениях ускоряющего напряжения.
|
| first_indexed | 2025-12-07T18:16:57Z |
| format | Article |
| fulltext |
ФІП ФИП PSE, 2007, т. 5, № 1-2, vol. 5, No. 1-228
INTRODUCTION
At present time, mostly due to development of a
technique for precise surface etching and for
producing nanometer size structures, an inductively
coupled plasma (ICP) is widely used as a common
instrument for technological processing [1 – 4]. ICP
sources are capable of generating ion beams of low
energy and high flux. On the one hand, the ion energy
is not sufficient to change the bulk characteristics of
the sample; on the other, due to the low energy
spread of the incident particles, the required level of
selectivity can be achieved during the etching of
surfaces that are partially covered with photoresist
[5]. In contrast to others sources utilizing ion optics,
a three-grid system allows one to obtain highly
focused ion beams with defined energies. In spite of
the high ion densities of the generated beams, the
ICP source makes possible uniform etching of
homogeneous materials over the entire area of the
processed surface.
One of the most important parameters cha-
racterizing any plasma source is the ion energy
distribution function (IEDF). In an ICP, it shows
strong dependence on the pressure, the magnitude
of plasma potential, and the length of the sheath that
is formed not only on the dielectric chamber walls
but also at regions adjacent to the acceleration
electrodes. As was shown in ref. 6, the dependence
of the distribution function on the pressure becomes
significant when the amplitude of oscillation of the
ion in an electromagnetic field becomes comparable
with the sheath length.
At the present time, in connection with the ne-
cessity to receive structures whose typical sizes do
not exceed several nanometers, the methods of
beam formation should be studied to receive ion
fluxes with strongly defined energies. That is why
in analyzing such a source one should consider not
only the characteristics of the ion optics but also the
number of plasma processes determining the
additional energy of the ions leaving the discharge
volume. This additional energy may reach 10% of
the beam energy in absolute value, which can lead
to overetching of the sample. Besides, the higher
the plasma potential at a given acceleration voltage,
the higher the energy spread of the ion distribution
function, which decreases the etching selectivity.
In spite of the fact that the electromagnetic field
in the antenna, in the dielectric wall and in the
electrically neutral plasma is a sinusoidal function,
inside the sheath it is not harmonic. As a result, the
plasma acquires a positive potential relative to the
walls of the discharge chamber. When no voltage is
applied to the acceleration grid, the ion energy is
determined by the magnitude V0p, which is part of
the equation for the plasma potential Vp = V0p +
Vasin(ωt) (in case of a purely inductive coupling,
the alternating component can be neglected). V0p
equals to the average value of the potential difference
between the plasma and the initially floating electrode
over the period of a plasma oscillation. The mag-
nitude Va is obviously smaller than V0p, owing to
the limited velocity of the charge carriers in the RF
oscillating field. The authors of the work [7]
demonstrated that eV0p equals the beam energy
within an accuracy of 3 – 5 eV. Thus, the additio-
nal beam energy that is observed during ion extraction
by means of the grid electrode system is determined
UDC 539.198
PLASMA POTENTIAL INFLUENCE ON ION ENERGY
DISTRIBUTION FUNCTION IN ICP SOURCE
O.V. Vozniy*,**, G.Y. Yeom*, A.Yu. Kropotov**
*Department of Materials Engineering, Sungkyunkwan University (Jangan-Gu Chunchun-Dong)
South Korea
**Scientific Center of Physical Technologies (Kharkiv)
Ukraine
Received 06.02.2007
In this work, the deviation of energy distribution function of energetic ions from the predetermined
value in an inductively coupled plasma (ICP) ion gun source is discussed. An abnormal plasma potential
increase at an extraction voltage 400 V caused a beam energy shift of up to 50 eV compared to the
preset value. The ion energy peak position was found to be more affected by pressure at higher
extraction voltages on the acceleration grid.
ФІП ФИП PSE, 2007, т. 5, № 1-2, vol. 5, No. 1-2 29
by the magnitude e(V0p – V1g), where V1g is the first
grid voltage.
In a three-grid ion optical system, the position of
the plasma boundary is controlled by the potential
difference between the first and the second elect-
rodes [8]. The boundary also can move at a constant
extraction voltage when the pressure is increased
due to continuity between the Child-Langmuir cur-
rent and the Bohm current. This process is ac-
companied by a plasma potential decrease.
The additional ion energy also depends on the
number of ion collisions and on the number of os-
cillating cycles in the RF field [6] during the ti-
me when it travels through the sheath. However,
in this paper, we consider only influence of the
magnitude Vp – V1g, as well as the pressure inside
the discharge volume, on additional beam energy.
EXPERIMENT
Fig. 1 illustrates a schematic diagram of the
experimental setup. A detailed description of the ICP
reactor can be found elsewhere [9].
The plasma was generated by means of elect-
romagnetic oscillations with a nominal frequency
of 13,56 MHz inside a spiral-type antenna. The
RF generator load resistance was tuned by using a
р-type matching unit. Ion beam formation and
focusing were provided by a system of accelerating
electrodes. The ion optics of the source included
planar grids, which were mounted 2 mm apart. The
screen grid, the decelerator, and the accelerator
grids, 96 mm in diameter with a thickness of 1 mm,
contained 2,0 mm holes in a 3,0 mm hexagonal
raster. Other grid geometries and materials were
tested and are available.
The ion energy was measured by using an ion
energy analyzer integrated into a quadrapole mass-
spectrometer (QMS) (Hiden Analytical). The dis-
tance between the ion source and the analyzer
inlet was equal 25 cm. The IEDF was less affected
by collisions at the beam transportation area due to
the strong pressure gradient between the gun and
the analyzer inlet. An investigation of a given
source type is necessary for a correct description
of etching systems that are capable to generating
beams of neutral molecules or radicals [10, 11]
to avoid charge-induced damage during the plas-
ma treatment [12]. The given method of ion ad-
ditional energy determination is not disturbing, in
contrast to methods employing emissive probes [13].
The pressure in the chamber was controlled by
using a Granville-Phillips ion gauge, Model 274006,
located between the source and the QMS inlet.
A planar Langmuir probe was installed to mea-
sure the ion current inside and outside the ion source.
RESULT AND DISCUSSION
IEDF profile analysis provides information on sheath
and pre-sheath characteristics, such as the potential
drop near the chamber walls and the energy transfer
mechanisms, including inelastic collisions and charge
exchange [14, 15]. The plasma potential is always
higher than the first electrode voltage due to high
electron mobility. Therefore, electroneutrality near
the electrode is not preserved at the region where
the electrons experience strong deceleration in a
repulsive field, i.e., at the outer boundary of the
space charge distribution, where a negative potential
relatively undisturbed plasma is close to the
magnitude kTe/e. For quasi-neutrality maintenance,
the ions coexist with more energetic electrons at the
sheath boundary. Thus the ion density in this region
approximately equals the electron density, i.e., is
close to n0exp(–e|V*|/kT), where V* is the poten-
tial relative to Vp. In the case of low pressure and
electron Maxwellian distribution, the plasma poten-
tial can be found from the expression for the cur-
rent collected by a Langmuir probe installed in-
side the ICP source:
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−−⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
π
= gp
ei
e
ei VV
kT
e
m
kTenj 1
21
exp
2 , (1)
where V1g is the grid potential, ne and Te are the
electron density and temperature respectively, and
mi is the ion mass.
Fig. 1. Schematic view of the 13,56 MHz ICP ion beam
source with a set of diagnostic tools, including a QMS
with an ion energy analyzer.
O.V. VOZNIY, G.Y. YEOM, A.YU. KROPOTOV
ФІП ФИП PSE, 2007, т. 5, № 1-2, vol. 5, No. 1-230
For pressures higher than 10–2 Torr, the form
of the IEDF is determined not only by the plas-
ma potential but also by the number of ion cycles
in the RF field during the ion’s travel through
the sheath, as well as by collisions taking place the-
re. Collisions then often result in a smoothing of
the distribution function and give rise to additional
IEDF peaks due to modifications of the sheath
structure and of the charge distribution in it. Since
there are no energetic electrons in the sheath [16],
inelastic collisions of ions with neutral gas atoms
play an essential role in the formation of the IEDF
and, correspondingly, in establishing the plasma
potential. The number of inelastic collisions is
determined by the formula
( ) ( ) ×⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
π
π==ν
23
2
18
ii
n
inii eTm
nTKnT
( )∫
∞
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛ −σ×
0
exp i
i
i
ii dE
eT
EEE , (2)
where K(Ti) is the collision rate constant, nn is
the neutral gas density, Ei is the ion energy, and σ
is the collision cross-section [17].
When the ions travel through a positive space
charge sheath, the current on the grid electrode is
determined by the Bohm criterion. The relation
between the plasma and the 1st grid potential is gi-
ven by the equation
21
1 2
ln ⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
π
=−
e
i
egp m
mTVV , (3)
Te is the electron temperature, and me and mi are
the electron and the ion mass respectively.
The variation of the plasma potential at the floa-
ting electrode doesn’t exceed 2 – 3 V in the pres-
sure range 5⋅10–3 – 1,3⋅10–2 Torr as follows from
IEDF measurements shown in fig. 2 in the case
when no potential was applied to the accelera-
tion grids.
The increase in the plasma potential with
decreasing operating pressure is a well known
phenomenon, because the lower rate of inelastic
collisions of electrons with atoms causes the electron
temperature to increase so that more electrons
escape to the wall and the potential of bulk plas-
ma increases [18]. As we see from fig. 2, the influ-
ence of the pressure on the plasma potential
near the floating electrode is not critical. Howe-
ver, the plasma potential increases drastically
compared to the voltage of the first grid during
extraction of high energy ions. Fig. 3 shows the
IEDF of energetic ions when the first grid poten-
tial is 410 V for pressures of 4,0⋅10–3; 5,2⋅10–3;
7,9⋅10–3 and 1,1⋅10–2 Torr. The energy is deno-
ted with ∆U, which is gained by the ions during
their travel through the potential difference at the
sheath. The expected value of the beam energy was
410 eV or a few eV larger, but as is seen from the
Fig. 2. IEDs of an Ar+ ion beam for different pressures
without voltage on the acceleration grid. The output po-
wer is P = 200 W.
Fig. 3. IEDs of Ar+ ions for 4⋅10-3 (the highest peak),
5,2⋅10–3; 7,9⋅10–3 and 1,07⋅10–2 Torr. The accelerating
voltage is 410 V, and the output power is P = 200 W.
PLASMA POTENTIAL INFLUENCE ON ION ENERGY DISTRIBUTION FUNCTION IN ICP SOURCE
ФІП ФИП PSE, 2007, т. 5, № 1-2, vol. 5, No. 1-2 31
picture, the difference between the preset magnitude
of the ion energy and its real value determined by
the plasma potential can reach 40 eV at lower
pressures.
There are at least two effects determining the
magnitude of the plasma potential. First, as was
mentioned before, ion inelastic collisions with
neutrals can significantly change the sheath structure,
in particular the thickness and the position relative
to the grid holes. Second, the transition region
between the bulk plasma and the space where the
ions are accelerated in the electrical field of the grid
system is not stationary when the pressure is
changed. At that, if the ion current in the plasma
is limited by the Bohm criterion,
21
6,0 ⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
≅
i
e
eb m
kTenj , (4)
then outside, it is determined by the Child-Lang-
muir equation
2
23
0
21
2
9
4
h
V
m
ej
i
i ⎟⎟
⎠
⎞
⎜⎜
⎝
⎛ε= . (5)
Here, mi is the ion mass, V0 = Vp – V1g, and h is
the sheath length. Due to the continuity of the
electrical current, the condition jb = ji should
be fulfilled. If the ion flux exceeds the vacuum
current limit (jb > ji), for example during a pres-
sure increase, then the plasma expands to reduce
the gap h between the bulk plasma and the elect-
rode until a flux balance is achieved. Since the cur-
rent ji depends on the plasma potential, there
is a certain correlation between it and the plas-
ma boundary position.
Fig. 3 also presents the ion current loss at higher
pressures, which is caused by a plasma potential
decrease. At this plasma surface, limited by the
sheath, changes its curvature near the extraction
holes, which leads to beam defocusing and a higher
rate of ion loss on the second grid. To prove that
the plasma surface deformation takes place for
different plasma potentials, we measured the
dependence of the loss current on the magnitude of
extraction voltage between the first and the second
grids (fig. 4). The second grid was under a constant
negative potential whereas the voltage of the first
one was varied from 0 to 900 V. This procedure
changes the magnitude of the loss current due to the
plasma boundary movement and, consequently, due
to the plasma potential variation [8]. It is logical to
assume that the beam intensity decrease (fig. 3)
during a pressure increase at a constant acceleration
voltage would also be accompanied by a plasma
boundary movement.
In the general case, the integral current density
increases linearly when the pressure grows [19], as
it is evidenced by the Langmuir probe measurements
inside the source shown in fig 5. At a pressure
of 5,5⋅10–3 Torr the slope of the c urve beco-
mes smaller. This is due to eq. (5) losing applicabi-
lity, due to inelastic collisions, as the pressure
approaches 10–2 Torr in the transition pressure ran-
ge [20].
It follows from [20] that the plasma potential
Vp = V0 – V1g increases when the ion mean free
path лi in a neutral gas becomes smaller. At the
same time, the plasma potential is affected by
the pressure due to a perturbation in the balance of
the continuity law ji = jb because eq. (4) for the
Bohm current includes the electron density and
temperature in the plasma. Both magnitudes
significantly depend on the number of inelastic
collisions of ions with electrons and atoms of residual
gas.
Fig. 5 illustrates the evolution of the Ar ions
mean energy, which is determined by eq. (6), as a
function of pressure:
( ) ( )dEEFdEEEFEi ∫∫
∞∞
=
00
, (6)
Fig. 4. Loss current due to plasma boundary movement
during extraction voltage increase.
O.V. VOZNIY, G.Y. YEOM, A.YU. KROPOTOV
ФІП ФИП PSE, 2007, т. 5, № 1-2, vol. 5, No. 1-232
where F(E) is the ion distribution function. The
dependence also has two regions with different
slopes, as it was for the ion current, indicating that
the ion’s mean energy, determined by the plasma
potential and the current intensity are interdepen-
dent parameters. Beginning from a pressure of
5,5⋅10–3 Torr, both magnitudes change their beha-
vior due to better electron confinement enhanced
by electron collisions with the background gas.
Fig. 6 shows the dependence of the difference
between the plasma potential and the first grid
voltage on the pressure and the accelerating volt-
age of the ICP ion source. Vp – V1g varied from
11,5 to 40 eV, reaching its maximum at lower
pressures and higher accelerating voltages. Al-
though, as was measured in Ref. 21, Vp can slightly
differ from the mean ion energy within the range
of 3 – 4 eV, assuming the scale, we can consider
these magnitudes equal.
CONCLUSION
The effect of a beam energy increase compared
to the preset value was studied by analyzing the
IEDF obtained in the transition pressure range
from 1⋅10–3 to 1⋅10–2 Torr and for high accele-
rating voltages on the electrode adjacent to the
plasma. The plasma potential variation with pressure
near the floating electrode was found not to exceed
3 – 5 V, however, this magnitude increased up to
50 V when 400 V was applied to the first elect-
rode. We believe that the main reasons for the plas-
ma potential increase near the holes of the biased
grid are sheath modification due to collisions and
plasma boundary movement according to the
continuity law that changes the charge balance in
the sheath when the grid surface is comparable to
the discharge volume.
Two slopes were found for the dependence of
the current on the pressure, indicating mecha-
nisms of ion extraction with and without collisions.
The ion current inside the source linearly grew as
the pressure increased; however, at the outlet of the
ion optical system, this growth was not observed,
which was caused by a plasma potential decrease
and an ensuing beam defocusing near the grid holes.
The described sequence of measurements can be
taken as a basic conception for precise ion energy
determination for the beams obtained with ICP
sources, which is the main precursor to their
application in nanotechnology.
REFERENCES
1. Hittorf W.//Ann. Phys. Chem. – 1984. – Vol.
21. – P. 90.
2. Tuszewski M., Tobin J.A.//J. Vac. Sci.
Technol.. – 1996. – Vol. A 14. – P. 109.
3. He D., Wang X., Chen Q., Li J.//J. Korean
Phys. Soc. – 2005. – Vol. 46. – P. S88.
4. Park J.H., Lee N.E., Lee Jaichan, Park J.S.,
Park H.D.//J. Korean Phys. Soc. – 2005. –
Vol. 47– P. S422.
5. Lee J.W., Abernathy C.R., Pearton S.J.,
Constantine C., Shul R.J., Hobson W.S.//Plasma
Sources Sci. Technol. – 1997. – Vol. 6. – P. 499.
6. Lieberman M.A., Lichtenberg A.J. Principles of
Plasma Discharges and Materials Processing. –
New York: Wiley, 1994.
7. Woodworth J.R., Riley M.E., Miller P.A., Hebner
G.A., Hamilton T.W.//J. Appl. Phys. – 1997. –
Vol. 81. – P. 5950.
Fig. 5. Ion current inside an ICP near the grid electrode
and the mean Ar+ ion energy as functions of pressure.
Fig. 6. Vp – V1g as a function of pressure and accelerating
voltage.
PLASMA POTENTIAL INFLUENCE ON ION ENERGY DISTRIBUTION FUNCTION IN ICP SOURCE
ФІП ФИП PSE, 2007, т. 5, № 1-2, vol. 5, No. 1-2 33
8. Humphries S.//J. Comp. Phys. – 2005. – Vol.
204. – P. 587.
9. Okada K., Komatsu S., Matsumoto S.//J. Mater.
Res. – 1999. – Vol. 14. – P. 578.
10. Chung M.J., Lee D.H., Yeom G.Y.// Surface and
Coatings Technology. – 2003. – Vol. 171. – P.
231.
11. Helmer B.A., Graves D.B.//J. Vac. Sci.
Technol. – 1998. – Vol. A 16. – P. 3502.
12. Yunogami T., Yokogawa K., Mizutani T.//J.
Vac. Sci. Technol. – 1995. – Vol. A 13. – P.
952.
13. Hershkowitz N., Cho Moo-Hyun, Pruski J.//
Plasma Sources Sci. Technol. – 1992. – Vol. 1.
– P. 87.
14. Kortshagen U., Zethoff M.//Plasma Sources
Sci. Technol. – 1995. – Vol. 4. – P. 541.
15. Hopwood J.//Appl. Phys. Lett. – 1993. – Vol.
62. – P. 940.
ВЛИЯНИЕ ПЛАЗМЕННОГО
ПОТЕНЦИАЛА НА ЗНАЧЕНИЕ
ФУНКЦИИ РАСПРЕДЕЛЕНИЯ ИОНОВ
ПО ЭНЕРГИЯМ В ИСТОЧНИКЕ НА
ОСНОВЕ ВЧИ РАЗРЯДА
А.В. Возный, Дж.Ю. Ям, А.Ю. Кропотов
В данной работе обсуждается отклонение функ-
ции распределения по энергиям ускоренных ионов
от установленного значения в источнике на ос-
нове ВЧИ разряда. Аномальное увеличение по-
тенциала плазмы при значении ускоряющего на-
пряжения 400 В вызывало смещение энергии
пучка в сторону больших значений на величину
до 50 эВ. При этом было обнаружено, что поло-
жение максимума функции распределения зави-
село от давления в большей степени при более
высоких значениях ускоряющего напряжения.
16. Okada K., Komatsu S., Matsumoto S.//J. Vac.
Sci. Technol. – 2003. – Vol. A 21. – P. 1988.
17. Itikawa Y., Hayashi M., Ichimura A., Onda K.,
Sakimoto K., Takayanagi K., Nakamura M.,
Nishimura H., Takayanagi T.//J. Phys. Chem.
Ref. – 1986. – Vol. Data 15. – P. 985.
18. Okada K., Komatsu S., Matsumoto S.//J. Vac.
Sci. Technol. – 1999. – Vol. 17. – P. 721.
19. Kim J.S., Rao1M.V., Cappelli M.A., Sharma1
S.P., Meyyappan M.//Plasma Sources Sci.
Technol. –2001. – Vol. 10. – P. 191.
20. Budjanski A.M. Child-Langmuir equation in
transition region of planar sheath RF discharge
in wave fields//Report thesis.– Kuibishev,
(Russia). – 1989.
21. Kim J.S., Rao M.V., Cappelli M.A., Sharma1
S.P., Meyyappan M.//Plasma Sources Sci.
Technol. – 2001. – Vol. 10. – P. 191.
ВПЛИВ ПЛАЗМЕННОГО ПОТЕНЦІАЛУ
НА ЗНАЧЕННЯ ФУНКЦІЇ РОЗПОДІЛУ
ІОНІВ ПО ЕНЕРГІЯХ У ДЖЕРЕЛІ НА
ОСНОВІ ВЧІ РОЗРЯДУ
О.В. Возний, Дж.Ю. Ям, О.Ю. Кропотов
У даній роботі обговорюється відхилення функ-
ції розподілу по енергіях прискорених іонів від
установленого значення в джерелі на основе ВЧІ
розряду. Аномальне збільшення потенціала плаз-
ми при значенні прискорючого напруження 400 В
викликало зсув енергії пучка убік великих значень
на величину до 50 еВ. При цьому було виявлено,
що положення максимуму функції розподілу
залежило від тиску в більшому ступені при більш
високих значеннях прискорючого напруження.
O.V. VOZNIY, G.Y. YEOM, A.YU. KROPOTOV
|
| id | nasplib_isofts_kiev_ua-123456789-98816 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1999-8074 |
| language | English |
| last_indexed | 2025-12-07T18:16:57Z |
| publishDate | 2007 |
| publisher | Науковий фізико-технологічний центр МОН та НАН України |
| record_format | dspace |
| spelling | Vozniy, O.V. Yeom, G.Y. Kropotov, A.Yu. 2016-04-17T21:58:53Z 2016-04-17T21:58:53Z 2007 Plasma potential influence on ion energy Distribution function in ICP source / O.V. Vozniy, G.Y. Yeom, A.Yu. Kropotov // Физическая инженерия поверхности. — 2007. — Т. 5, № 1-2. — С. 28–33. — Бібліогр.: 21 назв. — англ. 1999-8074 https://nasplib.isofts.kiev.ua/handle/123456789/98816 539.198 In this work, the deviation of energy distribution function of energetic ions from the predetermined
 value in an inductively coupled plasma (ICP) ion gun source is discussed. An abnormal plasma potential
 increase at an extraction voltage 400 V caused a beam energy shift of up to 50 eV compared to the
 preset value. The ion energy peak position was found to be more affected by pressure at higher
 extraction voltages on the acceleration grid. У даній роботі обговорюється відхилення функції розподілу по енергіях прискорених іонів від
 установленого значення в джерелі на основе ВЧІ
 розряду. Аномальне збільшення потенціала плазми при значенні прискорючого напруження 400 В
 викликало зсув енергії пучка убік великих значень
 на величину до 50 еВ. При цьому було виявлено,
 що положення максимуму функції розподілу
 залежило від тиску в більшому ступені при більш
 високих значеннях прискорючого напруження. В данной работе обсуждается отклонение функции распределения по энергиямускоренных ионов
 от установленного значения в источнике на основе ВЧИ разряда. Аномальное увеличение потенциала плазмы при значении ускоряющего напряжения 400 В вызывало смещение энергии
 пучка в сторону больших значений на величину
 до 50 эВ. При этом было обнаружено, что положение максимума функции распределения зависело от давления в большей степени при более
 высоких значениях ускоряющего напряжения. en Науковий фізико-технологічний центр МОН та НАН України Физическая инженерия поверхности Plasma potential influence on ion energy Distribution function in ICP source Вплив плазменного потенціалу на значення функції розподілу іонів по енергіях у джерелі на основі ВЧІ розряду Влияние плазменного потенциала на значение функции распределения ионов по энергиям в источнике на основе ВЧИ разряда Article published earlier |
| spellingShingle | Plasma potential influence on ion energy Distribution function in ICP source Vozniy, O.V. Yeom, G.Y. Kropotov, A.Yu. |
| title | Plasma potential influence on ion energy Distribution function in ICP source |
| title_alt | Вплив плазменного потенціалу на значення функції розподілу іонів по енергіях у джерелі на основі ВЧІ розряду Влияние плазменного потенциала на значение функции распределения ионов по энергиям в источнике на основе ВЧИ разряда |
| title_full | Plasma potential influence on ion energy Distribution function in ICP source |
| title_fullStr | Plasma potential influence on ion energy Distribution function in ICP source |
| title_full_unstemmed | Plasma potential influence on ion energy Distribution function in ICP source |
| title_short | Plasma potential influence on ion energy Distribution function in ICP source |
| title_sort | plasma potential influence on ion energy distribution function in icp source |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/98816 |
| work_keys_str_mv | AT vozniyov plasmapotentialinfluenceonionenergydistributionfunctioninicpsource AT yeomgy plasmapotentialinfluenceonionenergydistributionfunctioninicpsource AT kropotovayu plasmapotentialinfluenceonionenergydistributionfunctioninicpsource AT vozniyov vplivplazmennogopotencíalunaznačennâfunkcíírozpodíluíonívpoenergíâhudžerelínaosnovívčírozrâdu AT yeomgy vplivplazmennogopotencíalunaznačennâfunkcíírozpodíluíonívpoenergíâhudžerelínaosnovívčírozrâdu AT kropotovayu vplivplazmennogopotencíalunaznačennâfunkcíírozpodíluíonívpoenergíâhudžerelínaosnovívčírozrâdu AT vozniyov vliânieplazmennogopotencialanaznačeniefunkciiraspredeleniâionovpoénergiâmvistočnikenaosnovevčirazrâda AT yeomgy vliânieplazmennogopotencialanaznačeniefunkciiraspredeleniâionovpoénergiâmvistočnikenaosnovevčirazrâda AT kropotovayu vliânieplazmennogopotencialanaznačeniefunkciiraspredeleniâionovpoénergiâmvistočnikenaosnovevčirazrâda |