Dependence of the collision integral on electric field
Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier conductivity.
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| Datum: | 2015 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Dependence of the collision integral on electric field / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 138-143. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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oai:nasplib.isofts.kiev.ua:123456789-1218052025-02-23T17:36:55Z Dependence of the collision integral on electric field Boiko, I.I. Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier conductivity. 2015 Article Dependence of the collision integral on electric field / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 138-143. — Бібліогр.: 7 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.138 PACS 72.10-d, 72.20-i https://nasplib.isofts.kiev.ua/handle/123456789/121805 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier conductivity. |
| format |
Article |
| author |
Boiko, I.I. |
| spellingShingle |
Boiko, I.I. Dependence of the collision integral on electric field Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Boiko, I.I. |
| author_sort |
Boiko, I.I. |
| title |
Dependence of the collision integral on electric field |
| title_short |
Dependence of the collision integral on electric field |
| title_full |
Dependence of the collision integral on electric field |
| title_fullStr |
Dependence of the collision integral on electric field |
| title_full_unstemmed |
Dependence of the collision integral on electric field |
| title_sort |
dependence of the collision integral on electric field |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| citation_txt |
Dependence of the collision integral on electric field / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 138-143. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT boikoii dependenceofthecollisionintegralonelectricfield |
| first_indexed |
2025-07-22T04:23:36Z |
| last_indexed |
2025-07-22T04:23:36Z |
| _version_ |
1838319631104737280 |