ДЕКОГЕРЕНЦІЇ ІІІ-N НИЗЬКОРОЗМІРНІ НАНОСТРУКТУР КВАНТОВИХ ПРОЦЕСОРІВ
In the work proposes an increase in the time of the coherent state at room temperature by using quantum dots inside the single crystal structure with a large band gap, in particular, direct-gap materials or aluminum gallium nitride grown in nanoreactors anodic aluminum oxide or silicon oxide , resul...
Saved in:
| Date: | 2021 |
|---|---|
| Main Authors: | , , , |
| Format: | Article |
| Language: | Russian |
| Published: |
Vinnytsia National Technical University
2021
|
| Subjects: | |
| Online Access: | https://oeipt.vntu.edu.ua/index.php/oeipt/article/view/334 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Optoelectronic Information-Power Technologies |
Institution
Optoelectronic Information-Power Technologies| Summary: | In the work proposes an increase in the time of the coherent state at room temperature by using quantum dots inside the single crystal structure with a large band gap, in particular, direct-gap materials or aluminum gallium nitride grown in nanoreactors anodic aluminum oxide or silicon oxide , resulting in the pores of alumina . Our results show the effectiveness of such self-organized structures in order to create arrays of quantum dots that are resistant to decoherence processes. In comparison with other technologies for building a quantum computer, the use of wide-band direct-gap materials provides defect-free operation of the devices at room temperature. |
|---|