Математичне моделювання фізичного механізму утворення об'ємного приповерхневого заряду в напівпровідниках для інтелектуальних частотних сенсорів концентрації газу
In the article, a mathematical model of the physical mechanism of the occurrence of a bulk surface charge in semiconductors in primary gas sensitive semiconductor sensors is considered. The mathematical model describes the dependence of the active component of the impedance of the surface layer of a...
Збережено в:
| Дата: | 2020 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | Russian |
| Опубліковано: |
Vinnytsia National Technical University
2020
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| Теми: | |
| Онлайн доступ: | https://oeipt.vntu.edu.ua/index.php/oeipt/article/view/560 |
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| Назва журналу: | Optoelectronic Information-Power Technologies |
Репозитарії
Optoelectronic Information-Power Technologies| Резюме: | In the article, a mathematical model of the physical mechanism of the occurrence of a bulk surface charge in semiconductors in primary gas sensitive semiconductor sensors is considered. The mathematical model describes the dependence of the active component of the impedance of the surface layer of a semiconductor gas-sensitive element during the adsorption of gas molecules. Excess charge carriers during adsorption change the distribution of the electrostatic surface potential in the space charge layer. The solution of the Poisson equation made it possible to obtain expressions for the active component of the impedance on the surface of the electron and hole semiconductors of gas-sensitive sensors during the adsorption of gas molecules. An experimental dependence of a change in the resistance of a semiconductor gas-sensitive sensor based on ZnO on a change in methane concentration is presented. |
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