Особливості фото-ерс нанокластерних структур Ge, утворених на оксидованій поверхні Si
Ge nanocluster systems on SiOх are paid much interest of scientists today as far as introduction of an insulting SiOх layer can modify essentially the electrical properties of well examined Ge on Si structures making such systems prospective in the view of their possible application to new nanoelect...
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| Datum: | 2011 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2011
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| Online Zugang: | https://www.cpts.com.ua/index.php/cpts/article/view/122 |
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| Назва журналу: | Chemistry, Physics and Technology of Surface |