Особливості структури сколотих поверхонь шаруватих кристалів GaSe‹Sn›
The processes of formation of nanosized defects on the surfaces of layered crystals and the formation of semi-conductor nanostructures on them have been studied. The atomic force microscopy method for examination of the surface morphological characteristics has been used. Morphological features of n...
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| Datum: | 2011 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Russisch |
| Veröffentlicht: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2011
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| Online Zugang: | https://www.cpts.com.ua/index.php/cpts/article/view/125 |
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| Назва журналу: | Chemistry, Physics and Technology of Surface |
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Chemistry, Physics and Technology of Surface| Zusammenfassung: | The processes of formation of nanosized defects on the surfaces of layered crystals and the formation of semi-conductor nanostructures on them have been studied. The atomic force microscopy method for examination of the surface morphological characteristics has been used. Morphological features of nanostructures have been revealed on sheared surface of crystalline GaSe containing 0.01% Sn under normal conditions. |
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