ПОРІВНЯЛЬНИЙ АНАЛІЗ ДИНАМІЧНИХ ХАРАКТЕРИСТИК SI-MOSFET, SIC-MOSFET ТА SI-IGBT ТРАНЗИСТОРІВ
This work is dedicated to the practical determination and comparison of the dynamic characteristics of silicon (Si) MOSFET, silicon carbide (SiC) MOSFET, and silicon IGBT when switching an active-inductive load, which is the most used mode of operation in electric drives and power converters. The ma...
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| Date: | 2025 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
Інститут електродинаміки НАН України, Київ
2025
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| Subjects: | |
| Online Access: | https://techned.org.ua/index.php/techned/article/view/1709 |
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| Journal Title: | Technical Electrodynamics |