Квантові ефекти в багатошарових Si-Ge наногетероструктурах

• Datum: 2008
• Hauptverfasser: Kozyrev, Yu. N., Rubezhanska, M. Yu., Sushyі, A. V., Kondratenk, S. V., Vakulenko, O. V., Dadykin, A. A., Naumovets, A. G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2008
• Online Zugang: https://surfacezbir.com.ua/index.php/surface/article/view/267
• Назва журналу: Surface

The lateral photoconductivity spectra and photofield electron emission were used to investigate multilayer Ge/Si heterostructures with Ge quantum dots. Earlier we have revealed a close connection between elastic strain in Ge quantum dots originating due to the lattice mismatch during the epitaxial g...