Квантові ефекти в багатошарових Si-Ge наногетероструктурах

• Datum: 2008
• Hauptverfasser: Kozyrev, Yu. N., Rubezhanska, M. Yu., Sushyі, A. V., Kondratenk, S. V., Vakulenko, O. V., Dadykin, A. A., Naumovets, A. G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2008
• Online Zugang: https://surfacezbir.com.ua/index.php/surface/article/view/267
• Назва журналу: Surface

The lateral photoconductivity spectra and photofield electron emission were used to investigate multilayer Ge/Si heterostructures with Ge quantum dots. Earlier we have revealed a close connection between elastic strain in Ge quantum dots originating due to the lattice mismatch during the epitaxial growth and additional energy level forming in the strained Si-Ge heterojunction region. Thus, it appeared to be possible observing intraband transitions in Ge quantum dots that are absent in two-dimensional Si-Ge heterostructures using such simple and informative methods. While an influence of the number of Ge quantum dot layers on   lateral photoconductivity spectra is not essential, the photofield electron emission characteristics showed considerable shift to middle infrared area, as the number of Ge quantum dot layers increased. It was revealed that size and composition parameters of Ge quantum dots correspond to energy levels in the valence band of the latter with the energy distance between them about 0.32 and 0.34 eV with a high accuracy. The results of our investigation make it possible to expect their possible application in new nano- and optoelectronic devices.