Особливості кристалографії поверхонь сколювання (100) шаруватих напівпровідникових кристалів In4Se3

• Дата: 2014
• Автор: Galiy, P. V.
• Формат: Стаття
• Мова: Українська
• Опубліковано: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2014
• Теми: шарувато-ланцюжкові напівпровідникові кристали; поверхня сколювання (100) In4Se3; структурні дослідження
• Онлайн доступ: https://www.cpts.com.ua/index.php/cpts/article/view/285
• Назва журналу: Chemistry, Physics and Technology of Surface

The paper presents the results of structural investigations of In4Se3 layered chainlike semiconductor crystals by X-ray diffraction and their (100) cleavage surfaces studies by low energy electron diffraction (LEED). It has been shown that the (100) In4Se3 cleavage surface is structurally stable and does not undergo atomic reconstruction in a wide temperature range of 77–295 K. The constants of two-dimensional lattice on (100) cleavage plane surfaces of orthorhombic layered In4Se3 crystals were evaluated with application of diffraction patterns. Calculated surface lattice constants b = 11.475 ? and c = 3.734 ? agree, within the error limits, with their values obtained by X-diffraction (b = 12.308(1) ? and c = 4.0810(5) ?), indicating the adequacy of the model used to calculate the lattice constants of cleavage (100) surfaces of In4Se3 from the LEED results. Thereby, it is shown that (100) In4Se3surfaces are structurally stable with respect to the surface lattice symmetry they and do not undergo thermal atomic reconstruction, and surface lattice constants are slightly variable in a wide temperature range of 77–295 K within the temperature elongation limits.