Лазерно-стимульовані процеси в напівпровідниках

• Date: 2016
• Main Authors: Gentsar, P. O., Levytskyi, S. M.
• Format: Article
• Language: Ukrainian
• Published: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2016
• Subjects: Si; лазерне опромінення; спектри відбиття; спектри пропускання; ударна хвиля; температура поверхні; глибина плавлення; Ge1-хSix
• Online Access: https://www.cpts.com.ua/index.php/cpts/article/view/378
• Journal Title: Chemistry, Physics and Technology of Surface

The laser-stimulated processes have been studied in semiconductors Si i SiGe after their irradiation as well as influence of these processes on the optical properties of irradiated crystals. The results are shown of optical reflection spectra of n-Si(100) single crystals in the range 0.2–1.7 microns...