Релаксація розподілу надлишкових неосновних носіїв заряду в макропористому кремнію
Relaxation of the excess minority carrier distribution in macroporous silicon structure was calculated using the finite difference method. The initial distribution of the excess minority carriers has two maxima after carrier generation by electromagnetic wavelength 0.95 ?m with small absorption dept...
Gespeichert in:
| Datum: | 2018 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2018
|
| Schlagworte: | |
| Online Zugang: | https://www.cpts.com.ua/index.php/cpts/article/view/462 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Chemistry, Physics and Technology of Surface |