Релаксація розподілу надлишкових неосновних носіїв заряду в макропористому кремнію
Relaxation of the excess minority carrier distribution in macroporous silicon structure was calculated using the finite difference method. The initial distribution of the excess minority carriers has two maxima after carrier generation by electromagnetic wavelength 0.95 ?m with small absorption dept...
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| Date: | 2018 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2018
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| Subjects: | |
| Online Access: | https://www.cpts.com.ua/index.php/cpts/article/view/462 |
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| Journal Title: | Chemistry, Physics and Technology of Surface |