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Температурна залежність параметрів поверхневих станів структури метал–діелектрик–напівпровідник

Investigation temperature dependence of surface states parameters o metal-insulator-semiconductor are calculated a the high frequencies. The impedance of a built-channel bodiless planar field-effect transistor with two isolated gates are studied by a phase metrical method.

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Bibliographic Details
Date:2012
Main Authors: Gavrilyuk, O. O., Klymenko, V. E., Semchuk, O. Yu.
Format: Article
Language:Ukrainian
Published: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2012
Online Access:https://surfacezbir.com.ua/index.php/surface/article/view/470
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Journal Title:Surface
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Surface

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