Температурний та лазерний відпал нестехіометричних плівок SiOx
The last achievements in the field of creation of technologies of receiving silicon nanocrystals and the nanocomposite films containing nanocrystals of silicon in a dielectric matrix are described. The special attention is paid to two methods - temperature and laser annealing of  nonsto...
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| Datum: | 2013 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2013
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| Online Zugang: | https://surfacezbir.com.ua/index.php/surface/article/view/506 |
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| Назва журналу: | Surface |
| Завантажити файл: |  |
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Surface| Zusammenfassung: | The last achievements in the field of creation of technologies of receiving silicon nanocrystals and the nanocomposite films containing nanocrystals of silicon in a dielectric matrix are described. The special attention is paid to two methods - temperature and laser annealing of  nonstoichiometric films of SiOx. Theoretical study of thermal properties of nonstoichiometric films SiOx. Temperature distribution on the surface of SiOx films by irradiation of laser beams with varying intensity is calculated. It is shown that laser annealing with the intensity of the laser beam 59 MW/m2, the temperature on the surface of the SiOx films can reach 2100K. |
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