Metal-semiconductor phase transition in hydrated powders of VO2 as influenced by adsorbed water, polyethylene glycol medium, and tetraethylammonium bromide additives

• Date: 2001
• Author Affiliations: V. V. Turov — Інститут хімії поверхні НАН України; P. P. Gorbik — Інститут хімії поверхні НАН України; I. V. Laguta — Інститут хімії поверхні НАН України; O. V. Shulga — The University of Toledo; O. Yu. Semchuk — Інститут хімії поверхні НАН України; L. G. Grechko — Інститут хімії поверхні НАН України; V. M. Ogenko — Інститут хімії поверхні НАН України; A. A. Chuiko — Інститут хімії поверхні НАН України; M. Willander — Chalmers University of Technology and Göteborg University; M. Karlsteen — Chalmers University of Technology and Göteborg University
• Keywords: keywords
• Main Authors: Turov, V. V., Gorbik, P. P., Laguta, I. V., Shulga, O. V., Semchuk, O. Yu., Grechko, L. G., Ogenko, V. M., Chuiko, A. A., Willander, M., Karlsteen, M.
• Format: Article
• Language: English
• Published: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2001
• Online Access: https://surfacezbir.com.ua/index.php/surface/article/view/63
• Journal Title: Surface

The opportunity of use of a 1H NMR method for study of the performances of phase transition the metal - semiconductor in crystalline VO2 is considered. The influence of the adsorbed water, polyethylene glycol medium and presence of the tetraethylammonium bromide additives on the phase transition performances is explored. The phenomenon of phase heterogeneity VO2 is revealed which is exhibited as simultaneous existence of semiconductor and metal phases. Presumably this kind of heterogeneity is stipulated by an adsorption of bromide ions on a surface of particles VO2.