Трансформація аддимерів >Ge=GeGe=Si< ТА >Si=Si< на релаксованій грані Si(001)(4×2)

By the method of density functional theory (B3LYP, 6-31G **) three types of displacements are calculated, namely oscillations as a whole, rotation and diffusion of dimers > Ge = Ge <, > Ge = Si < and > Si = Si <, which ar...

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Bibliographic Details
Date:2021
Main Authors: Теребінська, М. І., Ткачук, О. І., Дацюк, А. М., Філоненко, О. В., Лобанов, В. В.
Format: Article
Language:Ukrainian
Published: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2021
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Online Access:https://surfacezbir.com.ua/index.php/surface/article/view/726
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Journal Title:Surface
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Surface