A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN

• Дата: 2024
• Автори: Zozulia, V. O., Botsula, O. V., Prykhodko, K. H.
• Формат: Стаття
• Мова: Ukrainian
• Опубліковано: Видавничий дім «Академперіодика» 2024
• Теми: millimeter wave; active side boundary (ASB); graded layer; impact ionization; mole fraction; oscillation efficiency; output power; intervalley transfer of electrons
• Онлайн доступ: http://rpra-journal.org.ua/index.php/ra/article/view/1457
• Назва журналу: Radio physics and radio astronomy

Subject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel approximately 1μm long. Its lateral surface carries a sem...