2025-02-23T05:58:11-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22oai%3Ari.kharkov.ua%3Aarticle-1457%22&qt=morelikethis&rows=5
2025-02-23T05:58:11-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22oai%3Ari.kharkov.ua%3Aarticle-1457%22&qt=morelikethis&rows=5
2025-02-23T05:58:11-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T05:58:11-05:00 DEBUG: Deserialized SOLR response
A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARY

A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARY

Subject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel approximately 1μm long. Its lateral surface carries a sem...

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Bibliographic Details
Main Authors: Zozulia, V. O., Botsula, O. V., Prykhodko, K. H.
Format: Article
Language:Ukrainian
Published: Видавничий дім «Академперіодика» 2024
Subjects:
millimeter wave
active side boundary (ASB)
graded layer
impact ionization
mole fraction
oscillation efficiency
output power
intervalley transfer of electrons
Online Access:http://rpra-journal.org.ua/index.php/ra/article/view/1457
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