Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors
The new method to provide the stability of lownoise HEMT-based amplifiers is proposed. The method is based on a purposeful choice of the DC regime in the unsaturated (ohmic) zone of voltagecurrent characteristic. Stability, first of all that outof- band, rises without degradation of noise characteri...
Збережено в:
| Дата: | 2012 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | rus |
| Опубліковано: |
Видавничий дім «Академперіодика»
2012
|
| Онлайн доступ: | http://rpra-journal.org.ua/index.php/ra/article/view/427 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Radio physics and radio astronomy |