Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors
The new method to provide the stability of lownoise HEMT-based amplifiers is proposed. The method is based on a purposeful choice of the DC regime in the unsaturated (ohmic) zone of voltagecurrent characteristic. Stability, first of all that outof- band, rises without degradation of noise characteri...
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| Дата: | 2012 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | rus |
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Видавничий дім «Академперіодика»
2012
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| Онлайн доступ: | http://rpra-journal.org.ua/index.php/ra/article/view/427 |
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| Назва журналу: | Radio physics and radio astronomy |
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Radio physics and radio astronomy| id |
oai:ri.kharkov.ua:article-427 |
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oai:ri.kharkov.ua:article-4272013-02-07T22:01:29Z Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors Ненасыщенный режим как альтернативный метод обеспечения устойчивости малошумящих усилителей на полевых транзисторных гетероструктурах Korolev, O. M. Shulga, V. M. The new method to provide the stability of lownoise HEMT-based amplifiers is proposed. The method is based on a purposeful choice of the DC regime in the unsaturated (ohmic) zone of voltagecurrent characteristic. Stability, first of all that outof- band, rises without degradation of noise characteristic. In support of the offered method efficiency, the results of examination of amplifiers on different transistors are brought. Предлагается новый метод обеспечения устойчивости малошумящих усилителей на полевых гетероструктурных транзисторах. Основа метода – целенаправленный выбор режима постоянного тока в ненасыщенной зоне вольт-амперных характеристик. Устойчивость, в первую очередь внеполосная, повышается без деградации шумовых характеристик. В подтверждение эффективности предложенного метода приводятся результаты исследования усилителей с различными типами транзисторов. Видавничий дім «Академперіодика» 2012-11-04 Article Article application/pdf http://rpra-journal.org.ua/index.php/ra/article/view/427 РАДИОФИЗИКА И РАДИОАСТРОНОМИЯ; Vol 16, No 4 (2011); 433 RADIO PHYSICS AND RADIO ASTRONOMY; Vol 16, No 4 (2011); 433 РАДІОФІЗИКА І РАДІОАСТРОНОМІЯ; Vol 16, No 4 (2011); 433 2415-7007 1027-9636 rus http://rpra-journal.org.ua/index.php/ra/article/view/427/301 |
| institution |
Radio physics and radio astronomy |
| collection |
OJS |
| language |
rus |
| format |
Article |
| author |
Korolev, O. M. Shulga, V. M. |
| spellingShingle |
Korolev, O. M. Shulga, V. M. Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors |
| author_facet |
Korolev, O. M. Shulga, V. M. |
| author_sort |
Korolev, O. M. |
| title |
Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors |
| title_short |
Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors |
| title_full |
Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors |
| title_fullStr |
Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors |
| title_full_unstemmed |
Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors |
| title_sort |
unsaturated regime as alternative method to provide stability of low-noise amplifier on high-electron-mobility transistors |
| title_alt |
Ненасыщенный режим как альтернативный метод обеспечения устойчивости малошумящих усилителей на полевых транзисторных гетероструктурах |
| description |
The new method to provide the stability of lownoise HEMT-based amplifiers is proposed. The method is based on a purposeful choice of the DC regime in the unsaturated (ohmic) zone of voltagecurrent characteristic. Stability, first of all that outof- band, rises without degradation of noise characteristic. In support of the offered method efficiency, the results of examination of amplifiers on different transistors are brought. |
| publisher |
Видавничий дім «Академперіодика» |
| publishDate |
2012 |
| url |
http://rpra-journal.org.ua/index.php/ra/article/view/427 |
| work_keys_str_mv |
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| first_indexed |
2024-05-26T06:32:54Z |
| last_indexed |
2024-05-26T06:32:54Z |
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