Плазмохимическое травление эпитаксиальных структур нитрида галлия
The results of plasma-chemical etching of gallium nitride epitaxial structures on sapphire substrates are presented. Etching was carried out in a plasma-chemical reactor with closed electron drift. The working gases were CCl₄ and its mixtures with O₂ or Ar. A nickel mask with a thickness of 0.5–0.8...
Збережено в:
| Дата: | 2005 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.6.42 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The results of plasma-chemical etching of gallium nitride epitaxial structures on sapphire substrates are presented. Etching was carried out in a plasma-chemical reactor with closed electron drift. The working gases were CCl₄ and its mixtures with O₂ or Ar. A nickel mask with a thickness of 0.5–0.8 μm was used. The average etching rate of complex epitaxial structures with gallium nitride, taking into account sapphire etching, was ≤540 Å/min. High-temperature Hall sensors for magnetic field measurements were fabricated. |
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