Определение характеристик двухбарьерных фотодиодных структур с металлополупроводниковыми переходами
Based on experimental data of the current–voltage characteristics and the dependence of resistance on voltage in double-barrier m‑pGaAs–nGdS and modified m‑pGaAs–pGaAs–nGdS structures, calculations were carried out for the redistribution of voltage between forward- and reverse-biased junctions. The...
Збережено в:
| Дата: | 2005 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.27 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | Based on experimental data of the current–voltage characteristics and the dependence of resistance on voltage in double-barrier m‑pGaAs–nGdS and modified m‑pGaAs–pGaAs–nGdS structures, calculations were carried out for the redistribution of voltage between forward- and reverse-biased junctions. The obtained data can be used to estimate the frequency range, the dependence of photosensitivity on the field, and to identify the mechanisms of photosensitivity in double-barrier structures with metal–semiconductor junctions. |
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