Определение характеристик двухбарьерных фотодиодных структур с металлополупроводниковыми переходами
Based on experimental data of the current–voltage characteristics and the dependence of resistance on voltage in double-barrier m‑pGaAs–nGdS and modified m‑pGaAs–pGaAs–nGdS structures, calculations were carried out for the redistribution of voltage between forward- and reverse-biased junctions. The...
Saved in:
| Date: | 2005 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2005
|
| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.27 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Summary: | Based on experimental data of the current–voltage characteristics and the dependence of resistance on voltage in double-barrier m‑pGaAs–nGdS and modified m‑pGaAs–pGaAs–nGdS structures, calculations were carried out for the redistribution of voltage between forward- and reverse-biased junctions. The obtained data can be used to estimate the frequency range, the dependence of photosensitivity on the field, and to identify the mechanisms of photosensitivity in double-barrier structures with metal–semiconductor junctions. |
|---|