Определение характеристик двухбарьерных фотодиодных структур с металлополупроводниковыми переходами

• Date: 2005
• Main Authors: Yodgorova, D. M., Karimov, A. V.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2005
• Subjects: двухбарьерная структура; перераспределение напряжения; слой объемного заряда; гетеропереход; металлополупроводниковый переход
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.27
• Journal Title: Technology and design in electronic equipment

Based on experimental data of the current–voltage characteristics and the dependence of resistance on voltage in double-barrier m‑pGaAs–nGdS and modified m‑pGaAs–pGaAs–nGdS structures, calculations were carried out for the redistribution of voltage between forward- and reverse-biased junctions. The...