Влияние гамма-облучения на фотоэлектрические параметры InSe-гетероструктур

• Datum: 2005
• Hauptverfasser: Kovalyuk, Z. D., Katerinchuk, V. N., Politanskaya, O. A., Sidor, O. N.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2005
• Schlagworte: гамма-облучение; фотодиод; p-n-InSe; оксид-p-InSe
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.47
• Назва журналу: Technology and design in electronic equipment

The influence of γ‑irradiation (60Co) on the photoelectric parameters of InSe diodes has been investigated. Irradiation at doses of 10–300 R leads to an increase in the values of the current rectification coefficient, open‑circuit voltage, and short‑circuit current, while practically not affecting t...